| PART |
Description |
Maker |
| PHE13003C |
Planar Passivated NPN Power Switching Transistor
|
Philips Semiconductors
|
| TXN05 TXN100 TYN40 TYN80K TXN058 TXN05G TXN05K TXN |
THYRISTORS
V(drm): 50V; 8A; glass passivated thyristor
V(drm): 1000V; 8A; glass passivated thyristor
V(drm): 100V; 8A; glass passivated thyristor
V(drm): 200V; 8A; glass passivated thyristor
V(drm): 400V; 8A; glass passivated thyristor
V(drm): 600V; 8A; glass passivated thyristor
V(drm): 800V; 8A; glass passivated thyristor
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| GL34M GL34A GL34B GL34D GL34G GL34J GL34K |
From old datasheet system
MINI-MELF glass passivated junction Diodes - Silicon passivated type
|
FORMOSA[Formosa MS]
|
| GBPC25 GBPC GBPC35 GBPC12 GBPC15 GBPC2504 GBPC3504 |
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers
Aluminum Polymer Radial Lead Capacitor; Capacitance: 680uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
12/ 15/ 25/ 35 Ampere Glass Passivated Bridge Rectifiers
25 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电5A，重复反相电压峰00V)) 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
35 Ampere Glass Passivated Bridge Rectifiers(玻璃钝化桥整流器（平均整流电35A，重复反相电压峰00V)) 35 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers 12555安培玻璃钝化整流
25 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
15 Ampere Glass Passivated Bridge Rectifiers(?荤????妗ユ?娴??锛?钩???娴??娴?5A锛??澶???哥???嘲??00V))
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| 20KW256A 20KW160 20KW160A 20KW216 20KW216A 20KW240 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
|
MDE Semiconductor
|
| GBPC2501 GBPC25005 GBPC2510 GBPC2508 GBPC2502 GBPC |
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 25 Amperes)
SINGLE PHASE SILICON PASSIVATED BRIDGE RECTIFIER
Isolated Flyback Switching Regulator with 9V Output 隔离反激式开关稳V输出
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
|
Shanghai Sunrise Electronics
Pan Jit International Inc.
CHENYI[Shanghai Lunsure Electronic Tech]
Shanghai LUNSURE Electronic Technology Co., Ltd.
General Semiconductor
|
| MMBT5400 MMBT5401 |
Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflahenmontage
|
Diotec Semiconductor
|
| MMBT5400 |
(MMBT5400 / MMBT5401) Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren
|
Diotec Semiconductor
|
| KTX301U |
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING) 平面PNP晶体管外延硅外延平面型二极管（通用，超高速开关）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| S2A S2J S2M S2K S2B S2D S2G |
1.5AMP SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER
SURFACE MOUNT GALSS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5Amperes
|
FUJI[Fuji Electric]
Chenyi Electronics
|
| KRC104M KRC101 KRC101M KRC102M KRC106M KRC103M KRC |
(KRC101M - KRC106M) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
EPITAXIAL PLANAR NPN TRANSISTOR
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
